Gas sensitive field effect transistor comprising a gas sensitive layer and method of producing the same

Transistor à effet de champ sensible aux gaz comprenant une couche sensible aux gaz et procédé de fabrication de ladite couche

Gassensitiver Feldeffekttransistor mit einer gassensitiven Schicht und Verfahren zu deren Herstellung

Abstract

Gassensitiver Feldeffekttransistor (FET) mit einer gassensitiven Schicht, mit der Sensorsignale durch Messung der Änderung der Austrittsarbeit generierbar sind, wobei die gassensitive Schicht aus Bariumtitanat (BaTiO 3 ) mit einem Überschuss an Bariumoxid (BaO) besteht und ein Teil der Schicht oberflächlich als Bariumcarbonat (BaCO 3 ) ausgebildet ist.
Gas-sensitive field effect transistor comprises a gas-sensitive layer for generating sensor signals by measuring the change of the output work. The gas-sensitive layer is made from barium titanate with an excess of barium oxide with a part of the layer formed as barium carbonate on the surface. An independent claim is also included for a process for the production of a gas-sensitive layer in the above gas-sensitive field effect transistor.

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Cited By (2)

    Publication numberPublication dateAssigneeTitle
    DE-102006046225-A1April 03, 2008Siemens AgDevice for collecting component in air, particularly humidity, carbon dioxide, humans harmful pollutants and odorous substances, comprises gas-sensitive field-effect transistor with gas-sensitive gate for collection of a component in air
    EP-1770392-A1April 04, 2007Micronas GmbHTransistor à effet de champ sensible aux gaz pour la détection de chlore