High density semiconductor memory device and process for producing the same

Dispositif semi-conducteur de mémoire à grande densité et procédé pour sa fabrication

Halbleiterspeicher hoher Dichte und Verfahren zu dessen Herstellung

Abstract

A charge-pump-memory device is disclosed which comprises an insulating substrate (11) on which are arranged: an n + semiconductor region (12) which constitutes a bit line; another n + semiconductor region (14) which constitutes a power supply line; and a p-type semiconductor region (13) between the two n + semiconductor regions which is a floating base region; a metal wiring layer (16) constituting a word line is situated on an insulating layer (15) over the semiconductor regions, the floating base region being separated from the wiring layer by only a thin portion of the insulating layer. The bit line runs parallel with the power supply line and perpendicular to the metal wiring constituting the word line.

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Patent Citations (7)

    Publication numberPublication dateAssigneeTitle
    DE-2643931-A1March 30, 1978Siemens AgIntegrated semiconductor module for telephone program store - has several substrate blocks with several component separated by groove and set on common insulator
    DE-2744194-B2December 06, 1979Siemens Ag, 1000 Berlin Und 8000 Muenchen
    DE-2808257-A1May 31, 1979Nippon Telegraph & TelephoneHalbleitervorrichtung und verfahren zu ihrer herstellung
    DE-2927824-A1January 31, 1980Vlsi Technology Res AssHalbleitervorrichtungen und ihre herstellung
    DE-2939300-A1August 21, 1980Rca CorpNichtfluechtiger speicher
    GB-2033656-AMay 21, 1980Rca CorpNonvolatile memory device
    US-4241359-ADecember 23, 1980Nippon Telegraph And Telephone Public CorporationSemiconductor device having buried insulating layer

NO-Patent Citations (2)

    Title
    IEEE Transaction on Electron Devices, Vol. ED-28, No. 1, January 1981 New York N. SASAKI "Charge Pumping in SOS-MOS Transistors" pages 48 to 52
    Japanese Journal of Applied Physics Vol. 19, Supplement 19-1, 1980 Tokyo N. SASAKI et al. "Charge Pumping Memory with SOS-MOS Transistors" pages 155 to 160

Cited By (0)

    Publication numberPublication dateAssigneeTitle