High density semiconductor memory device and process for producing the same

Dispositif semi-conducteur de mémoire à grande densité et procédé pour sa fabrication

Halbleiterspeicher hoher Dichte und Verfahren zu dessen Herstellung


A charge-pump-memory device is disclosed which comprises an insulating substrate (11) on which are arranged: an n + semiconductor region (12) which constitutes a bit line; another n + semiconductor region (14) which constitutes a power supply line; and a p-type semiconductor region (13) between the two n + semiconductor regions which is a floating base region; a metal wiring layer (16) constituting a word line is situated on an insulating layer (15) over the semiconductor regions, the floating base region being separated from the wiring layer by only a thin portion of the insulating layer. The bit line runs parallel with the power supply line and perpendicular to the metal wiring constituting the word line.




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Patent Citations (7)

    Publication numberPublication dateAssigneeTitle
    DE-2643931-A1March 30, 1978Siemens AgIntegrated semiconductor module for telephone program store - has several substrate blocks with several component separated by groove and set on common insulator
    DE-2744194-B2December 06, 1979Siemens Ag, 1000 Berlin Und 8000 Muenchen
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NO-Patent Citations (2)

    IEEE Transaction on Electron Devices, Vol. ED-28, No. 1, January 1981 New York N. SASAKI "Charge Pumping in SOS-MOS Transistors" pages 48 to 52
    Japanese Journal of Applied Physics Vol. 19, Supplement 19-1, 1980 Tokyo N. SASAKI et al. "Charge Pumping Memory with SOS-MOS Transistors" pages 155 to 160

Cited By (0)

    Publication numberPublication dateAssigneeTitle